Point Defect Characterization of 3C-SiC Layers Grown on Si (001) by Hot Wall CVD

http://www.ecscrm2006.org/ Schottky diodes have been fabricated and point defect characterization conducted on single crystalline 3C-SiC films in order to correlate its electrical properties with device performance. DLTS characterization, performed over a temperature and bias range of 50-150K and 0.05-5V, respectively, showed the presence of two traps. The position of one of the traps moved from approximately 175 K to 240 K when the bias was increased from 0.05V to 5V; while the position for the other trap remained unchanged. We believe this phenomenon may be attributed to a surface effect, a Poole-Frenkel effect or, alternatively, to an in-depth dependence of the trap emission properties on electric field. The 3C-SiC on Si films were planarized to improve the performance of gold Schottky contacts resulting in diodes with an ideality factor of 2. Electron beam induced current (EBIC) in a scanning electron microscope (SEM) system was used to structurally analyze the films. Finally, point defect characterization was performed via capacitance-voltage (C-V) measurements, deep level transient spectroscopy (DLTS) and spectral photocurrent (PC).