We describe the use of x-ray absorption spectroscopy (XAS) with synchrotron radiation to study the local atomic structure of high-k oxide thin and ultra thin films deposited on silicon. A brief description of the advantages of XAS to probe local atomic arrangements in this context is given. We then describe two case studies: Y2O3/Si(001) and Lu2O3/Si(001).
M. Malvestuto, F. Boscherini (2007). Local atomic environment of high-k oxides on silicon probed by x-ray absorption spectroscopy. BERLIN : Springer.
Local atomic environment of high-k oxides on silicon probed by x-ray absorption spectroscopy
MALVESTUTO, MARCO;BOSCHERINI, FEDERICO
2007
Abstract
We describe the use of x-ray absorption spectroscopy (XAS) with synchrotron radiation to study the local atomic structure of high-k oxide thin and ultra thin films deposited on silicon. A brief description of the advantages of XAS to probe local atomic arrangements in this context is given. We then describe two case studies: Y2O3/Si(001) and Lu2O3/Si(001).File in questo prodotto:
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