GaAs nanowires have been grown on SiO2 and GaAs by molecular beam epitaxy using manganese as growth catalyst. Transmission electron microscopy shows that the wires have a wurtzite-type lattice and that r-Mn particles are found at the free end of the wires. X-ray absorption fine structure measurements reveal the presence of a significant fraction of Mn-As bonds, suggesting Mn diffusion and incorporation during wire growth. Transport measurements indicate that the wires are p-type, as expected from doping of GaAs with Mn.
Manganese-Induced Growth of GaAs Nanowires / F. Martelli; S. Rubini; M. Piccin; G. Bais; F. Jabeen; S. De Franceschi; V. Grillo; E. Carlino; F. D’Acapito; F. Boscherini; S. Cabrini; M. Lazzarino; L. Businaro; F. Romanato; A. Franciosi. - In: NANO LETTERS. - ISSN 1530-6984. - STAMPA. - 6:(2006), pp. 2130-2134. [10.1021/nl0607838]
Manganese-Induced Growth of GaAs Nanowires
BOSCHERINI, FEDERICO;
2006
Abstract
GaAs nanowires have been grown on SiO2 and GaAs by molecular beam epitaxy using manganese as growth catalyst. Transmission electron microscopy shows that the wires have a wurtzite-type lattice and that r-Mn particles are found at the free end of the wires. X-ray absorption fine structure measurements reveal the presence of a significant fraction of Mn-As bonds, suggesting Mn diffusion and incorporation during wire growth. Transport measurements indicate that the wires are p-type, as expected from doping of GaAs with Mn.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
