The present invention relates to organic semiconductors to be used as intrinsic, direct detectors for ionizing radiations, such as X and gamma rays, neutrons, and charged particles (alpha rays, electrons, positrons, and the like), and to a method for manufacturing such intrinsic, direct detectors for ionizing radiations. The invention further relates to instruments or complex devices provided with a detector based on,or somehow incorporating, the above detectors.

Direct detectors for ionizing radiations, and methods for producing such detectors

FRABONI, BEATRICE;
2015

Abstract

The present invention relates to organic semiconductors to be used as intrinsic, direct detectors for ionizing radiations, such as X and gamma rays, neutrons, and charged particles (alpha rays, electrons, positrons, and the like), and to a method for manufacturing such intrinsic, direct detectors for ionizing radiations. The invention further relates to instruments or complex devices provided with a detector based on,or somehow incorporating, the above detectors.
EP2739992
B.Fraboni; A.Fraleoni-Morgera
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/396844
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