The present invention relates to organic semiconductors to be used as intrinsic, direct detectors for ionizing radiations, such as X and gamma rays, neutrons, and charged particles (alpha rays, electrons, positrons, and the like), and to a method for manufacturing such intrinsic, direct detectors for ionizing radiations. The invention further relates to instruments or complex devices provided with a detector based on,or somehow incorporating, the above detectors.
Titolo: | Direct detectors for ionizing radiations, and methods for producing such detectors |
Inventore/i: | FRABONI, BEATRICE; A. Fraleoni Morgera |
Inventore/i Unibo: | |
Anno di deposito: | 2015 |
Numero Brevetto: | EP2739992 |
Breve descrizione (Abstract): | The present invention relates to organic semiconductors to be used as intrinsic, direct detectors for ionizing radiations, such as X and gamma rays, neutrons, and charged particles (alpha rays, electrons, positrons, and the like), and to a method for manufacturing such intrinsic, direct detectors for ionizing radiations. The invention further relates to instruments or complex devices provided with a detector based on,or somehow incorporating, the above detectors. |
Data stato definitivo: | 22-ott-2015 |
Appare nelle tipologie: | 6.01 Brevetto |
File in questo prodotto:
Eventuali allegati, non sono esposti
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.