The present invention relates to organic semiconductors to be used as intrinsic, direct detectors for ionizing radiations, such as X and gamma rays, neutrons, and charged particles (alpha rays, electrons, positrons, and the like), and to a method for manufacturing such intrinsic, direct detectors for ionizing radiations. The invention further relates to instruments or complex devices provided with a detector based on,or somehow incorporating, the above detectors.
Direct detectors for ionizing radiations, and methods for producing such detectors
FRABONI, BEATRICE;
2015
Abstract
The present invention relates to organic semiconductors to be used as intrinsic, direct detectors for ionizing radiations, such as X and gamma rays, neutrons, and charged particles (alpha rays, electrons, positrons, and the like), and to a method for manufacturing such intrinsic, direct detectors for ionizing radiations. The invention further relates to instruments or complex devices provided with a detector based on,or somehow incorporating, the above detectors.File in questo prodotto:
Eventuali allegati, non sono esposti
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
