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EnglishThe present invention relates to organic semiconductors to be used as intrinsic, direct detectors for ionizing radiations, such as X and gamma rays, neutrons, and charged particles (alpha rays, electrons, positrons, and the like), and to a method for manufacturing such intrinsic, direct detectors for ionizing radiations. The invention further relates to instruments or complex devices provided with a detector based on,or somehow incorporating, the above detectors.
| Titolo: | Direct detectors for ionizing radiations, and methods for producing such detectors | |
| Inventore/i: | FRABONI, BEATRICE; A. Fraleoni Morgera | |
| Inventore/i Unibo: | ||
| Anno di deposito: | 2015 | |
| Numero Brevetto: | EP2739992 | |
| Breve descrizione (Abstract): | The present invention relates to organic semiconductors to be used as intrinsic, direct detectors for ionizing radiations, such as X and gamma rays, neutrons, and charged particles (alpha rays, electrons, positrons, and the like), and to a method for manufacturing such intrinsic, direct detectors for ionizing radiations. The invention further relates to instruments or complex devices provided with a detector based on,or somehow incorporating, the above detectors. | |
| Data stato definitivo: | 22-ott-2015 | |
| Appare nelle tipologie: | 6.01 Brevetto |
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