The present invention relates to organic semiconductors to be used as intrinsic, direct detectors for ionizing radiations, such as X and gamma rays, neutrons, and charged particles (alpha rays, electrons, positrons, and the like), and to a method for manufacturing such intrinsic, direct detectors for ionizing radiations. The invention further relates to instruments or complex devices provided With a detector based on, or somehow incorporating, the above detectors.
Fraboni, B., A., F.M. (2014). DIRECT DETECTORS FOR IONIZING RADIATIONS, AND METHODS FOR PRODUCING SUCH DETECTORS.
DIRECT DETECTORS FOR IONIZING RADIATIONS, AND METHODS FOR PRODUCING SUCH DETECTORS
FRABONI, BEATRICE;
2014
Abstract
The present invention relates to organic semiconductors to be used as intrinsic, direct detectors for ionizing radiations, such as X and gamma rays, neutrons, and charged particles (alpha rays, electrons, positrons, and the like), and to a method for manufacturing such intrinsic, direct detectors for ionizing radiations. The invention further relates to instruments or complex devices provided With a detector based on, or somehow incorporating, the above detectors.File in questo prodotto:
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