In this paper we present a study of the neutrons-induced damage in Silicon Photo-Multipliers. Twenty-six devices, produced by AdvanSiD, Hamamatsu and SensL, have been irradiated at the Geel Electron LINear Accelerator (GELINA) in Belgium with a nearly white neutron beam. The total 1 MeV equivalent integrated dose was 6.2E9 neq/cm2. Photodetector performances have been measured during the whole irradiation period and a gradual worsening of the detector properties, such as dark current and charge spectra, has been observed. An extensive comparison of the performances of all the tested devices will be presented.
Study of the radiation damage of Silicon Photo-Multipliers at the GELINA facility / M Andreotti;W Baldini;R Calabrese;G Cibinetto;A Cotta Ramusino;C De Donato;R Faccini;M Fiorini;E Luppi;R Malaguti;A Montanari;A Pietropaolo;V Santoro;G Tellarini;L Tomassetti;N Tosi. - In: JOURNAL OF INSTRUMENTATION. - ISSN 1748-0221. - ELETTRONICO. - 9:(2014), pp. P04004-P04004. [10.1088/1748-0221/9/04/P04004]
Study of the radiation damage of Silicon Photo-Multipliers at the GELINA facility
TOSI, NICOLÒ
2014
Abstract
In this paper we present a study of the neutrons-induced damage in Silicon Photo-Multipliers. Twenty-six devices, produced by AdvanSiD, Hamamatsu and SensL, have been irradiated at the Geel Electron LINear Accelerator (GELINA) in Belgium with a nearly white neutron beam. The total 1 MeV equivalent integrated dose was 6.2E9 neq/cm2. Photodetector performances have been measured during the whole irradiation period and a gradual worsening of the detector properties, such as dark current and charge spectra, has been observed. An extensive comparison of the performances of all the tested devices will be presented.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
