This study sheds light on the microscopic mechanisms by which self-assembled monolayers (SAMs) determine the onset voltage in organic thin-film transistors (OTFTs). Experiments and modeling are combined to investigate the self-assembly and electrostatic interaction processes in prototypical OTFT structures (SiO2/SAM/pentacene), where alkylated and fluoroalkylated silane SAMs are compared. The results highlight the coverage-dependent impact of the SAM on the density of semiconductor states and enable the rationalization and the control of the OTFT characteristics.

Multiscale Modeling of the Electrostatic Impact of Self-Assembled Monolayers used as Gate Dielectric Treatment in Organic Thin-Film Transistors

ROSCIONI, OTELLO MARIA;MUCCIOLI, LUCA;ZANNONI, CLAUDIO;
2014

Abstract

This study sheds light on the microscopic mechanisms by which self-assembled monolayers (SAMs) determine the onset voltage in organic thin-film transistors (OTFTs). Experiments and modeling are combined to investigate the self-assembly and electrostatic interaction processes in prototypical OTFT structures (SiO2/SAM/pentacene), where alkylated and fluoroalkylated silane SAMs are compared. The results highlight the coverage-dependent impact of the SAM on the density of semiconductor states and enable the rationalization and the control of the OTFT characteristics.
Alexander Mityashin; Otello Maria Roscioni; Luca Muccioli; Claudio Zannoni; Victor Geskin; Jerome Cornil; Dimitri Janssen; Soeren Steudel; Jan Genoe; Paul Heremans
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11585/350915
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