Silicon technology is rapidly progressing toward device sizes in the range of 10 nm. The evolution rate of silicon technology in next decades will require the use of new materials and processes to develop revolutionary CMOS devices. Organic nanostructures onto semiconductors or metals may provide interesting solutions to address the technological issues of nanoscale devices. In particular, technologies and devices based on organic nanostructures such as carbon nanotubes, semiconductor or metallic nanoparticles, DNA-templated nanowires may supply solutions for on-chip interconnections. The aim of the this work is to present recent results on hybrid nanostructures based on gold nanoparticles stabilized by organic coating. Particular emphasis is devoted to the problem of the interconnections at the nanoscale. The resulting hybrid devices are suitable to develop Single Electron Transistors and memories.

Hybrid Nanostructures: Organic Interconnections and Device Applications

CARRARA, SANDRO;SAMORI', BRUNO;
2006

Abstract

Silicon technology is rapidly progressing toward device sizes in the range of 10 nm. The evolution rate of silicon technology in next decades will require the use of new materials and processes to develop revolutionary CMOS devices. Organic nanostructures onto semiconductors or metals may provide interesting solutions to address the technological issues of nanoscale devices. In particular, technologies and devices based on organic nanostructures such as carbon nanotubes, semiconductor or metallic nanoparticles, DNA-templated nanowires may supply solutions for on-chip interconnections. The aim of the this work is to present recent results on hybrid nanostructures based on gold nanoparticles stabilized by organic coating. Particular emphasis is devoted to the problem of the interconnections at the nanoscale. The resulting hybrid devices are suitable to develop Single Electron Transistors and memories.
2006
Proceedings of the IEEE Conference "First International Conference on Nano-Networks"
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S. Carrara; B. Samorì; M. Di Pasquale; A. Ansaldo; M. T. Parodi; D. Ricci; E. Di Zitti; S. Bernstorff
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/30547
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