Graphene oxide (GO) and chemically modified graphene oxide have been dispersed in low amount (until 0.5 wt\%) into epoxy resin. Comparing the dielectric responses of the polymer nanocomposites with those of neat epoxy, no significantly changes were noted. Relevant differences were recorded after a post-curing heating treatment able to reduce the dispersed GO to more conductive graphene. Neat epoxy and epoxy samples with chemically modified GO had usually a small decrease on permittivity while GO samples showed an increase of about 10\% of the value previously observed. This behavior will be connected with chemical properties of the nanofiller. © 2013 IEEE.

Preparation and dielectric behavior of epoxy resin containing graphene oxide / P. Mancinelli;D. Fabiani;A. Saccani;M. Toselli;T. Heid;M. Frechette;S. Savoie;E. David. - STAMPA. - (2013), pp. 915-918. (Intervento presentato al convegno 2013 IEEE International Conference on Solid Dielectrics (ICSD) tenutosi a Bologna, Italy nel June 2013) [10.1109/ICSD.2013.6619697].

Preparation and dielectric behavior of epoxy resin containing graphene oxide

MANCINELLI, PAOLO;FABIANI, DAVIDE;SACCANI, ANDREA;TOSELLI, MAURIZIO;
2013

Abstract

Graphene oxide (GO) and chemically modified graphene oxide have been dispersed in low amount (until 0.5 wt\%) into epoxy resin. Comparing the dielectric responses of the polymer nanocomposites with those of neat epoxy, no significantly changes were noted. Relevant differences were recorded after a post-curing heating treatment able to reduce the dispersed GO to more conductive graphene. Neat epoxy and epoxy samples with chemically modified GO had usually a small decrease on permittivity while GO samples showed an increase of about 10\% of the value previously observed. This behavior will be connected with chemical properties of the nanofiller. © 2013 IEEE.
2013
2013 IEEE International Conference on Solid Dielectrics (ICSD)
915
918
Preparation and dielectric behavior of epoxy resin containing graphene oxide / P. Mancinelli;D. Fabiani;A. Saccani;M. Toselli;T. Heid;M. Frechette;S. Savoie;E. David. - STAMPA. - (2013), pp. 915-918. (Intervento presentato al convegno 2013 IEEE International Conference on Solid Dielectrics (ICSD) tenutosi a Bologna, Italy nel June 2013) [10.1109/ICSD.2013.6619697].
P. Mancinelli;D. Fabiani;A. Saccani;M. Toselli;T. Heid;M. Frechette;S. Savoie;E. David
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/270105
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