Physics and high background conditions set very challenging requirements on readout speed, material budget and resolution for the innermost layer of the SuperB Silicon Vertex Tracker operated at the full luminosity. Monolithic Active Pixel Sensors (MAPS) are very appealing in this application since the thin sensitive region allows grinding the substrate to tens of microns. Deep N-Well MAPS, developed in the ST 130 nm CMOS technology, achieved in-pixel sparsification and fast time stamping. Further improvements are being explored with an intense R&D program, including both vertical integration and 2D MAPS with the INMAPS quadruple well. We present the results of the characterization with IR laser, radioactive sources and beam of several chips produced with the 3D (Chartered/Tezzaron) process. We have also studied prototypes exploiting the features of the quadruple well and the high resistivity epitaxial layer of the INMAPS 180 nm process. Promising results from an irradiation campaign with neutrons on small matrices and other test-structures, as well as the response of the sensors to high energy charged tracks are presented.
Latest results of the R&D on CMOS MAPS for the Layer0 of the SuperB SVT / G. Balestri;G. Batignani;G. Beck;A. Bernardelli;A. Berra;S. Bettarini;|A. Bevan;L. Bombelli;F. Bosi;L. Bosisio;G. Casarosa;M. Ceccanti;R. Cenci;M. Citterio;S. Coelli;D. Comotti;G.-F. Dalla Betta;L. Fabbri;C. Fiorini;G. Fontana;F. Forti;A. Gabrielli;L. Gaioni;F. Gannaway;F. Giorgi;M.A. Giorgi;L. Lanceri;V. Liberali;D. Lietti;A. Lusiani;P. Mammini;A. Manazza;M. Manghisoni;M. Monti;J. Morris;F. Morsani;B. Nasri;N. Neri;B. Oberhof;F. Palombo;L. Pancheri;E. Paoloni;G. Pellegrini;A. Perez;G. Petragnani;M. Prest;M. Povoli;A. Profeti;E. Quartieri;I. Rashevskaya;L. Ratti;V. Re;G. Rizzo;C. Sbarra;N. Semprini Cesari;A. Soldani;A. Stabile;C. Stella;G. Traversi;S. Valentinetti;G. Verzellesi;M. Villa;L. Vitale;J. Walsh;F. Wilson;A. Zoccoli;S. Zucca. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - STAMPA. - 732:(2013), pp. 484-487. [10.1016/j.nima.2013.05.170]
Latest results of the R&D on CMOS MAPS for the Layer0 of the SuperB SVT
FABBRI, LAURA;GABRIELLI, ALESSANDRO;GIORGI, FILIPPO MARIA;SBARRA, CARLA;SEMPRINI CESARI, NICOLA;VALENTINETTI, SARA;VILLA, MAURO;ZOCCOLI, ANTONIO;
2013
Abstract
Physics and high background conditions set very challenging requirements on readout speed, material budget and resolution for the innermost layer of the SuperB Silicon Vertex Tracker operated at the full luminosity. Monolithic Active Pixel Sensors (MAPS) are very appealing in this application since the thin sensitive region allows grinding the substrate to tens of microns. Deep N-Well MAPS, developed in the ST 130 nm CMOS technology, achieved in-pixel sparsification and fast time stamping. Further improvements are being explored with an intense R&D program, including both vertical integration and 2D MAPS with the INMAPS quadruple well. We present the results of the characterization with IR laser, radioactive sources and beam of several chips produced with the 3D (Chartered/Tezzaron) process. We have also studied prototypes exploiting the features of the quadruple well and the high resistivity epitaxial layer of the INMAPS 180 nm process. Promising results from an irradiation campaign with neutrons on small matrices and other test-structures, as well as the response of the sensors to high energy charged tracks are presented.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
