InAlN/AlN/GaN heterostructures have a high potential to be used in HEMTs because of their ability to provide high electron mobility and high 2D electron gas density. Here we report the characterization of MOCVD grown Al0.84In0.16N/AlN/GaN heterostructures using Four Probe Current-Voltage (I-V) measurements. InAlN/AlN/GaN heterostructures with for different AlN interlayer thicknesses (0-7.5nm) and also different barrier layer thicknesses have been explored. The four probe Current-Voltage measurements have been performed at room temperature. A change of the conduction mechanism has been observed and a model has been developed to extract the 2DEG properties by the current-voltage characteristics. By comparing I-V and Hall effect results we could assess the reliability of common I-V analyses in the determination of the major transport properties of the 2DEG.. This work was supported by the EU under Project No. PITN-GA-2008 213238_RAINBOW
Saurabh Pandey , B. Fraboni, D. Cavalcoli, A. Minj, A. Cavallini , H.Behmenburg, et al. (2011). Electrical characterization of 2DEG transport properties in In0.14Al0.86N/AlN/GaN heterostructures.
Electrical characterization of 2DEG transport properties in In0.14Al0.86N/AlN/GaN heterostructures
FRABONI, BEATRICE;CAVALCOLI, DANIELA;CAVALLINI, ANNA;
2011
Abstract
InAlN/AlN/GaN heterostructures have a high potential to be used in HEMTs because of their ability to provide high electron mobility and high 2D electron gas density. Here we report the characterization of MOCVD grown Al0.84In0.16N/AlN/GaN heterostructures using Four Probe Current-Voltage (I-V) measurements. InAlN/AlN/GaN heterostructures with for different AlN interlayer thicknesses (0-7.5nm) and also different barrier layer thicknesses have been explored. The four probe Current-Voltage measurements have been performed at room temperature. A change of the conduction mechanism has been observed and a model has been developed to extract the 2DEG properties by the current-voltage characteristics. By comparing I-V and Hall effect results we could assess the reliability of common I-V analyses in the determination of the major transport properties of the 2DEG.. This work was supported by the EU under Project No. PITN-GA-2008 213238_RAINBOWI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
