In the framework of plasma deposition of silicon heterojunction solar cells, the issue of depositing, by VHF, a microcrystalline emitter, without affecting the passivating properties of the underlying amorphous buffer layer, is addressed. The sequence Deposition-Exposure to H2 Plasma-Deposition was used to fabricate the microcrystalline emitter. Using High Resolution Transmission Electron Microscopy, we give microscopic evidence of the long range effects of hydrogen, already inferred by large area optical techniques. Upon exposure to H2 plasma, it is observed that silicon nanocrystallites are formed within the amorphous layer. Thinner amorphous layers undergo etching, and epitaxial growth takes place from the substrate. Photovoltaic devices with open circuit voltage up to 638 mV were fabricated.
Silicon heterojunction solar cells with p nanocrystalline thin emitter on monocrystalline substrate / F. ZIGNANI; A. DESALVO; E. CENTURIONI; D. IENCINELLA; R. RIZZOLI; C. SUMMONTE; A. MIGLIORI. - In: THIN SOLID FILMS. - ISSN 0040-6090. - STAMPA. - 451-452:(2004), pp. 350-354. [10.1016/j.tsf.2003.11.010]
Silicon heterojunction solar cells with p nanocrystalline thin emitter on monocrystalline substrate
ZIGNANI, FLAVIO;DESALVO, AGOSTINO;CENTURIONI, EMANUELE;IENCINELLA, DANIELE;
2004
Abstract
In the framework of plasma deposition of silicon heterojunction solar cells, the issue of depositing, by VHF, a microcrystalline emitter, without affecting the passivating properties of the underlying amorphous buffer layer, is addressed. The sequence Deposition-Exposure to H2 Plasma-Deposition was used to fabricate the microcrystalline emitter. Using High Resolution Transmission Electron Microscopy, we give microscopic evidence of the long range effects of hydrogen, already inferred by large area optical techniques. Upon exposure to H2 plasma, it is observed that silicon nanocrystallites are formed within the amorphous layer. Thinner amorphous layers undergo etching, and epitaxial growth takes place from the substrate. Photovoltaic devices with open circuit voltage up to 638 mV were fabricated.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.