In this paper the characteristics of the graded band gap profiles of CIGS thin film solar cells are reviewed. Influence of the valence and conduction band grading of the absorber material on the main parameters of the cell is considered. A new graded band gap profile which exploits the widening of both the valence and conduction bands is proposed. Furthermore, the possibility of conduction band grading of the window material near the surface region to enhance the carrier transfer is discussed.
N. E. Gorji, M. D. Perez, U. Reggiani, L. Sandrolini (2012). A New Approach to Valence and Conduction Band Grading in CIGS Thin Film Solar Cells. INTERNATIONAL JOURNAL OF ENGINEERING AND TECHNOLOGY, 4(5), 573-576 [10.7763/IJET.2011.V4.435].
A New Approach to Valence and Conduction Band Grading in CIGS Thin Film Solar Cells
ESHAGHI GORJI, NIMA;REGGIANI, UGO;SANDROLINI, LEONARDO
2012
Abstract
In this paper the characteristics of the graded band gap profiles of CIGS thin film solar cells are reviewed. Influence of the valence and conduction band grading of the absorber material on the main parameters of the cell is considered. A new graded band gap profile which exploits the widening of both the valence and conduction bands is proposed. Furthermore, the possibility of conduction band grading of the window material near the surface region to enhance the carrier transfer is discussed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
