A four-diode equivalent circuit for CIGS thin film solar cells incorporating some physical phenomena such as trap states and grain boundaries is presented. The proposed model can be used for the precise analysis, extraction of the electrical parameters and exact prediction of the current versus voltage characteristic of CIGS thin film solar cells. Furthermore, the buffer layer current and impact ionization effects are introduced and discussed in the equivalent circuit.

An Extended Equivalent Circuit Model for CIGS Solar Cells

ESHAGHI GORJI, NIMA;REGGIANI, UGO;SANDROLINI, LEONARDO
2012

Abstract

A four-diode equivalent circuit for CIGS thin film solar cells incorporating some physical phenomena such as trap states and grain boundaries is presented. The proposed model can be used for the precise analysis, extraction of the electrical parameters and exact prediction of the current versus voltage characteristic of CIGS thin film solar cells. Furthermore, the buffer layer current and impact ionization effects are introduced and discussed in the equivalent circuit.
2012
Proceedings of 27th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC)
2856
2859
N. E. Gorji; U. Reggiani; L. Sandrolini
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/130900
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