A four-diode equivalent circuit for CIGS thin film solar cells incorporating some physical phenomena such as trap states and grain boundaries is presented. The proposed model can be used for the precise analysis, extraction of the electrical parameters and exact prediction of the current versus voltage characteristic of CIGS thin film solar cells. Furthermore, the buffer layer current and impact ionization effects are introduced and discussed in the equivalent circuit.
An Extended Equivalent Circuit Model for CIGS Solar Cells / N. E. Gorji; U. Reggiani; L. Sandrolini. - ELETTRONICO. - (2012), pp. 2856-2859. (Intervento presentato al convegno 27th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) tenutosi a Frankfurt, Germany nel September 24-28, 2012) [10.4229/27thEUPVSEC2012-3DV.3.54].
An Extended Equivalent Circuit Model for CIGS Solar Cells
ESHAGHI GORJI, NIMA;REGGIANI, UGO;SANDROLINI, LEONARDO
2012
Abstract
A four-diode equivalent circuit for CIGS thin film solar cells incorporating some physical phenomena such as trap states and grain boundaries is presented. The proposed model can be used for the precise analysis, extraction of the electrical parameters and exact prediction of the current versus voltage characteristic of CIGS thin film solar cells. Furthermore, the buffer layer current and impact ionization effects are introduced and discussed in the equivalent circuit.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
