Radiation detection: novel approaches and readout capabilities exploiting latchup topology via bipolar, MOSFET and MESFET transistors

The stimulated ignition of latchup effects caused by external radiation has so far proven to be a hidden hazard. Here this effect is described as a novel approach to detect particles by means of a solid-state device susceptible to latchup effects. In addition, the device can also be used as a circuit for reading sensors devices, leaving the sensing capability to external sensors. The paper describes the state-of-the-art of the proposal and its development over the latest years and then the present and future studies are shown. The study begins using traditional bipolar transistors since the latchup effect is originated as a parasitic circuit composed of such devices. Then, an equivalent circuit built up of MOS transistors is exploited, resulting an even more promising and challenging configuration than that obtained via bipolar transistors. For this, an elementary cell composed of two transistors connected in a thyristor structure is presented. Eventually, also a circuit implementing a MESFET commercial component confirms the basic principle. As the MOS transistors are widely used at present in microelectronics devices and sensors, a latchup based cell is proposed as a novel structure for future applications in particle detection, amplification of signal sensors and radiation monitoring.