With the perspective to develop a radiation-tolerant circuit for High Energy Physics (HEP) applications, a test digital ASIC VLSI chip, called STRURED, has been designed and fabricated using a standard-cell library of commercial 130 nm CMOS technology by implementing three different radiation-tolerant architectures (Hamming, Triple Modular Redundancy and Triple Time Redundancy) in order to correct circuit malfunctions induced by the occurrence of Soft Errors (SEs). SEs are one of the main reasons of failures affecting electronic digital circuits operating in harsh radiation environments, such as in experiments performed at HEP colliders or in apparatus to be operated in space. In this paper we present and discuss the latest results of SE cross-section measurements performed using the STRURED digital device, exposed to high energy heavy ions at the SIRAD irradiation facility of the INFN National Laboratories of Legnaro (Padova, Italy). In particular the different behaviors of the input part and the core of the three radiation-tolerant architectures are analyzed in detail.
Candelori A., De Robertis G., Gabrielli A., Mattiazzo S., Pantano D., Ranieri A., et al. (2011). Latest results on SEE measurements obtained on the STRURED demontrator ASIC. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT, 626-627, 82-89 [10.1016/j.nima.2010.10.018].
Latest results on SEE measurements obtained on the STRURED demontrator ASIC
GABRIELLI, ALESSANDRO;
2011
Abstract
With the perspective to develop a radiation-tolerant circuit for High Energy Physics (HEP) applications, a test digital ASIC VLSI chip, called STRURED, has been designed and fabricated using a standard-cell library of commercial 130 nm CMOS technology by implementing three different radiation-tolerant architectures (Hamming, Triple Modular Redundancy and Triple Time Redundancy) in order to correct circuit malfunctions induced by the occurrence of Soft Errors (SEs). SEs are one of the main reasons of failures affecting electronic digital circuits operating in harsh radiation environments, such as in experiments performed at HEP colliders or in apparatus to be operated in space. In this paper we present and discuss the latest results of SE cross-section measurements performed using the STRURED digital device, exposed to high energy heavy ions at the SIRAD irradiation facility of the INFN National Laboratories of Legnaro (Padova, Italy). In particular the different behaviors of the input part and the core of the three radiation-tolerant architectures are analyzed in detail.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
