The stimulated ignition of latchup effects caused by external radiation has till now proved to be a hidden hazard. However this paper presents the effect in a new light-as a new approach for detecting particles by means of a solid-state device susceptible to latchup effects. This device can also be used as a circuit for reading a sensor's signal by leaving off-circuit sensing capabilities. Given that MOS transistors are widely used in microelectronics devices and sensors, the latchup-based cell is proposed as a new structure for future applications in particle detection, in the amplification of sensor signals and also in radiation monitoring.
Gabrielli A. (2010). Latchup Topology for Pixel Readout using Commercial Transistors. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 57/4, 2167-2172 [10.1109/TNS.2010.2051560].
Latchup Topology for Pixel Readout using Commercial Transistors
GABRIELLI, ALESSANDRO
2010
Abstract
The stimulated ignition of latchup effects caused by external radiation has till now proved to be a hidden hazard. However this paper presents the effect in a new light-as a new approach for detecting particles by means of a solid-state device susceptible to latchup effects. This device can also be used as a circuit for reading a sensor's signal by leaving off-circuit sensing capabilities. Given that MOS transistors are widely used in microelectronics devices and sensors, the latchup-based cell is proposed as a new structure for future applications in particle detection, in the amplification of sensor signals and also in radiation monitoring.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
