The stimulated ignition of latchup effects caused by external radiation has till now proved to be a hidden hazard. However this paper presents the effect in a new light-as a new approach for detecting particles by means of a solid-state device susceptible to latchup effects. This device can also be used as a circuit for reading a sensor's signal by leaving off-circuit sensing capabilities. Given that MOS transistors are widely used in microelectronics devices and sensors, the latchup-based cell is proposed as a new structure for future applications in particle detection, in the amplification of sensor signals and also in radiation monitoring.
Latchup Topology for Pixel Readout using Commercial Transistors / Gabrielli A.. - In: IEEE TRANSACTIONS ON NUCLEAR SCIENCE. - ISSN 0018-9499. - STAMPA. - 57/4:(2010), pp. 2167-2172. [10.1109/TNS.2010.2051560]
Latchup Topology for Pixel Readout using Commercial Transistors
GABRIELLI, ALESSANDRO
2010
Abstract
The stimulated ignition of latchup effects caused by external radiation has till now proved to be a hidden hazard. However this paper presents the effect in a new light-as a new approach for detecting particles by means of a solid-state device susceptible to latchup effects. This device can also be used as a circuit for reading a sensor's signal by leaving off-circuit sensing capabilities. Given that MOS transistors are widely used in microelectronics devices and sensors, the latchup-based cell is proposed as a new structure for future applications in particle detection, in the amplification of sensor signals and also in radiation monitoring.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
