Structural and local electrical properties of AlInN/AlN/GaN heterostructures

GaN layers and Al1xInxN/AlN/GaN heterostructures have been studied by scanning probe microscopy methods. Threading dislocations(TDs), originating from the GaN(0001) layer grown on sapphire, have been investigated. Using Current-Atomic Force Microscopy(C-AFM)TDs have been found to be highly conductive in both GaN and AlInN, while using semi-contact AFM (phase-imagingmode) indium segregation has been traced at TDs in AlInN/AlN/GaN heterostructures. It has been assessed that In segregation is responsible for high conductivity at dislocations in the examined heterostructures.