A multiscale investigation of N,N-bis(n-octyl)-x:y, dicyanoperylene-3,4:9,10- bis(dicarboximide), PDI8-CN2, shows the same molecular arrangement in the bulk and in thin films sublimated on SiO2/Si wafers. Non-conventional powder diffraction methods and theoretical calculations concur to provide a coherent picture of the crystalline structure. X-ray diffraction (XRD) and atomic force microscopy (AFM) analyses of films of different thickness depos- ited at different substrate temperatures indicate the existence of two temper- ature-dependent deposition regimes: a low-temperature (room temperature) regime and a high-temperature (80­120 °C) one, each characterized by dif- ferent growth mechanisms. These mechanisms eventually result in different morphological and structural features of the films, which appear to be highly correlated with the trend of the electrical parameters that are measured in PDI8-CN2-based field-effect transistors.

Structure and morphology of PDI8-CN2 for n-type thin-film transistors

DELLA VALLE, RAFFAELE GUIDO;VENUTI, ELISABETTA;BRILLANTE, ALDO;
2012

Abstract

A multiscale investigation of N,N-bis(n-octyl)-x:y, dicyanoperylene-3,4:9,10- bis(dicarboximide), PDI8-CN2, shows the same molecular arrangement in the bulk and in thin films sublimated on SiO2/Si wafers. Non-conventional powder diffraction methods and theoretical calculations concur to provide a coherent picture of the crystalline structure. X-ray diffraction (XRD) and atomic force microscopy (AFM) analyses of films of different thickness depos- ited at different substrate temperatures indicate the existence of two temper- ature-dependent deposition regimes: a low-temperature (room temperature) regime and a high-temperature (80­120 °C) one, each characterized by dif- ferent growth mechanisms. These mechanisms eventually result in different morphological and structural features of the films, which appear to be highly correlated with the trend of the electrical parameters that are measured in PDI8-CN2-based field-effect transistors.
2012
F. Liscio; S. Milita; C. Albonetti; P. D'Angelo; A. Guagliardi; N. Masciocchi; R.G. Della Valle; E. Venuti; A. Brillante; F. Biscarini
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/117756
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