The present invention relates to organic semiconductors to be used as intrinsic, direct detectors for ionizing radiations, such as X and gamma rays, neutrons, and charged particles (alpha rays, electrons, positrons, and the like), and to a method for manufacturing such intrinsic, direct detectors for ionizing radiations. The invention further relates to instruments or complex devices provided with a detector based on, or somehow incorporating, organic semiconductors used as intrinsic, direct detectors for ionizing radiations. In particular, the instruments according to the present invention are useful as X-ray detectors in medical field, for example in dentistry, medical imaging; in civil field, for example in airports, borders and in analytical techniques, or in R&D or industrial activities
B.Fraboni, A.Fraleoni-Morgera (2011). Intrinsic direct detectors for ionizing radiations and methods for producing such detectors.
Intrinsic direct detectors for ionizing radiations and methods for producing such detectors
FRABONI, BEATRICE;
2011
Abstract
The present invention relates to organic semiconductors to be used as intrinsic, direct detectors for ionizing radiations, such as X and gamma rays, neutrons, and charged particles (alpha rays, electrons, positrons, and the like), and to a method for manufacturing such intrinsic, direct detectors for ionizing radiations. The invention further relates to instruments or complex devices provided with a detector based on, or somehow incorporating, organic semiconductors used as intrinsic, direct detectors for ionizing radiations. In particular, the instruments according to the present invention are useful as X-ray detectors in medical field, for example in dentistry, medical imaging; in civil field, for example in airports, borders and in analytical techniques, or in R&D or industrial activitiesI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
