The characteristics of the graded band gap profiles of the CIGS thin film solar cells have been reviewed. Influence of the valence and conduction band grading of the absorber material on the main parameters of the cell have been considered. A new graded band gap profile is proposed which exploits the widening both of valence and conduction bands. Furthermore, we discussed the possibility of conduction band grading of the window material near the surface region to enhance the carrier transfer.
A New Approach to Valence and Conduction Band Grading in CIGS Thin Film Solar Cells / N. E. Gorji; U. Reggiani; M. D. Perez; L. Sandrolini. - ELETTRONICO. - (2011), pp. 154-157. (Intervento presentato al convegno ICCSIT 2011 - 2011 4th IEEE International Conference on Computer Science and Information Technology tenutosi a Chengdu, China nel June 10-12, 2011).
A New Approach to Valence and Conduction Band Grading in CIGS Thin Film Solar Cells
ESHAGHI GORJI, NIMA;REGGIANI, UGO;SANDROLINI, LEONARDO
2011
Abstract
The characteristics of the graded band gap profiles of the CIGS thin film solar cells have been reviewed. Influence of the valence and conduction band grading of the absorber material on the main parameters of the cell have been considered. A new graded band gap profile is proposed which exploits the widening both of valence and conduction bands. Furthermore, we discussed the possibility of conduction band grading of the window material near the surface region to enhance the carrier transfer.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
