In future collider experiments, the increasing luminosity and centre of mass energy are rising challenging problems in the design of new inner tracking systems. In this context we develop high-efficiency readout architectures for large binary pixel matrices that are meant to cope with the high-stressing conditions foreseen in the innermost layers of a tracker. We model and design digital readout circuits to be integrated on VLSI ASICs. These architectures can be realized with different technology processes and sensors: they can be implemented on the same silicon sensor substrate of a CMOS MAPS devices (Monolithic Active Pixel Sensor), on the CMOS tier of a hybrid pixel sensor or in a 3D chip where the digital layer is stacked on the sensor and the analog layers. In the presented work, we consider a data-push architecture designed for a sensor matrix of an area of about 1.3 cm^2 with a pitch of 50 microns. The readout circuit tries to take great advantage of the high density of in-pixel digital logic allowed by vertical integration. We aim at sustaining a rate density of 100 Mtrack/s/cm^2 with a temporal resolution below 1 μs. We show how this architecture can cope with these stressing conditions presenting the results of Monte Carlo simulations.
Gabrielli A., Giorgi F., Morsani F., Villa M. (2011). Development and simulation results of a sparsification and readout circuit for wide pixel matrices. NUCLEAR PHYSICS B-PROCEEDINGS SUPPLEMENTS, 215, 307-309 [10.1016/j.nuclphysbps.2011.04.040].
Development and simulation results of a sparsification and readout circuit for wide pixel matrices
GABRIELLI, ALESSANDRO;GIORGI, FILIPPO MARIA;VILLA, MAURO
2011
Abstract
In future collider experiments, the increasing luminosity and centre of mass energy are rising challenging problems in the design of new inner tracking systems. In this context we develop high-efficiency readout architectures for large binary pixel matrices that are meant to cope with the high-stressing conditions foreseen in the innermost layers of a tracker. We model and design digital readout circuits to be integrated on VLSI ASICs. These architectures can be realized with different technology processes and sensors: they can be implemented on the same silicon sensor substrate of a CMOS MAPS devices (Monolithic Active Pixel Sensor), on the CMOS tier of a hybrid pixel sensor or in a 3D chip where the digital layer is stacked on the sensor and the analog layers. In the presented work, we consider a data-push architecture designed for a sensor matrix of an area of about 1.3 cm^2 with a pitch of 50 microns. The readout circuit tries to take great advantage of the high density of in-pixel digital logic allowed by vertical integration. We aim at sustaining a rate density of 100 Mtrack/s/cm^2 with a temporal resolution below 1 μs. We show how this architecture can cope with these stressing conditions presenting the results of Monte Carlo simulations.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.