The high luminosity SuperB asymmetric ee- collider, to be built near the INFN National Frascati Laboratory in Italy, has been designed to deliver a luminosity greater than 1036 cm-2 s-1 with moderate beam currents and a reduced center of mass boost with respect to earlier B-Factories. An improved vertex resolution is required for precise time-dependent measurements and the SuperB Silicon Vertex Tracker will be equipped with an innermost layer of small radius (about 1.5 cm), resolution of 1015μm in both coordinates, low material budget (<1% X0), and able to withstand a background rate of several tens of MHz/cm2. The ambitious goal of designing a thin pixel device with these stringent requirements is being pursued with specific R&D programs on different technologies: hybrid pixels, CMOS MAPS and pixel sensors developed with vertical integration technology.
Rizzo G., Avanzini C., Batignani G., Bettarini. S., Bosi F., Ceccanti M., et al. (2011). Thin pixel development for the SuperB silicon vertex tracker. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT, 650, 169-173 [10.1016/j.nima.2010.12.111].
Thin pixel development for the SuperB silicon vertex tracker
DI SIPIO, RICCARDO;GIACOBBE, BENEDETTO;GABRIELLI, ALESSANDRO;GIORGI, FILIPPO MARIA;SBARRA, CARLA;SEMPRINI CESARI, NICOLA;SPIGHI, ROBERTO;VALENTINETTI, SARA;VILLA, MAURO;ZOCCOLI, ANTONIO;
2011
Abstract
The high luminosity SuperB asymmetric ee- collider, to be built near the INFN National Frascati Laboratory in Italy, has been designed to deliver a luminosity greater than 1036 cm-2 s-1 with moderate beam currents and a reduced center of mass boost with respect to earlier B-Factories. An improved vertex resolution is required for precise time-dependent measurements and the SuperB Silicon Vertex Tracker will be equipped with an innermost layer of small radius (about 1.5 cm), resolution of 1015μm in both coordinates, low material budget (<1% X0), and able to withstand a background rate of several tens of MHz/cm2. The ambitious goal of designing a thin pixel device with these stringent requirements is being pursued with specific R&D programs on different technologies: hybrid pixels, CMOS MAPS and pixel sensors developed with vertical integration technology.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
