We report on the design, fabrication, and characterization of a Silicon Nitride (SiN)-based integrated photonic chip in which the dielectric waveguides are coupled to photodetectors integrated homogeneously into the Silicon substrate. The photonic-electronic coupling was realized by a 3D inverse tapering of SiN waveguides. The novelty of our approach consists in tapering the waveguide in the vertical direction by means of an engineered wet chemical etching. This allows for a smooth transition from a full-height to an arbitrarily thin waveguide thickness at the detector location, expanding adiabatically the optical mode towards the latter. The measured chips showed a responsivity R≈109 μA/mW and a corresponding quantum efficiency of 16% at an excitation wavelength of 850 nm. Our technological solution offers a versatile method for a top-down monolithic integration of lightwave circuitries with substrate-located photon sensing devices.
Bernard, M., Gemma, L., Brunelli, D., Paternoster, G., Ghulinyan, M. (2022). Coupling of Photonic Waveguides to Integrated Detectors Using 3D Inverse Tapering. JOURNAL OF LIGHTWAVE TECHNOLOGY, 40(18), 6201-6206 [10.1109/JLT.2022.3190041].
Coupling of Photonic Waveguides to Integrated Detectors Using 3D Inverse Tapering
Brunelli, Davide;
2022
Abstract
We report on the design, fabrication, and characterization of a Silicon Nitride (SiN)-based integrated photonic chip in which the dielectric waveguides are coupled to photodetectors integrated homogeneously into the Silicon substrate. The photonic-electronic coupling was realized by a 3D inverse tapering of SiN waveguides. The novelty of our approach consists in tapering the waveguide in the vertical direction by means of an engineered wet chemical etching. This allows for a smooth transition from a full-height to an arbitrarily thin waveguide thickness at the detector location, expanding adiabatically the optical mode towards the latter. The measured chips showed a responsivity R≈109 μA/mW and a corresponding quantum efficiency of 16% at an excitation wavelength of 850 nm. Our technological solution offers a versatile method for a top-down monolithic integration of lightwave circuitries with substrate-located photon sensing devices.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.



