This study presents the application of a recently proposed double-pulsed radio-frequency (RF) measurement technique for characterizing the dynamic behavior of Gallium Nitride (GaN) High-Electron-Mobility Transistors (HEMTs). In particular, the measurement procedure aims to analyze the trapping and detrapping mechanisms affecting the device's performance under realistic RF operating conditions. By varying both the RF prepulse duration and the time interval between the RF prepulse and the main RF pulse (ranging from a few microseconds to a few milliseconds), a wide range of trap capture and release dynamics can be evaluated.
Tiberi, M., Angelotti, A.M., Gibiino, G.P., Avolio, G., Marchetti, M. (2025). Evaluation of Trapping Dynamics in GaN HEMTs from Double-Pulse RF Load-Pull Measurements. Institute of Electrical and Electronics Engineers Inc. [10.1109/inmmic64198.2025.10975526].
Evaluation of Trapping Dynamics in GaN HEMTs from Double-Pulse RF Load-Pull Measurements
Tiberi, Matteo;Angelotti, Alberto Maria;Gibiino, Gian Piero;
2025
Abstract
This study presents the application of a recently proposed double-pulsed radio-frequency (RF) measurement technique for characterizing the dynamic behavior of Gallium Nitride (GaN) High-Electron-Mobility Transistors (HEMTs). In particular, the measurement procedure aims to analyze the trapping and detrapping mechanisms affecting the device's performance under realistic RF operating conditions. By varying both the RF prepulse duration and the time interval between the RF prepulse and the main RF pulse (ranging from a few microseconds to a few milliseconds), a wide range of trap capture and release dynamics can be evaluated.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
