Ultracold collisions of ions with neutral atoms in traps are studied. Recently, ultracold atom-ion systems have become available in experimental setups, where their quantum states can be coherently controlled. This control allows for an implementation of quantum information processing, combining the advantages of charged and neutral particles. The state-dependent dynamics that is a necessary ingredient for quantum computation schemes is provided in this case by the short-range interaction forces that depend on the hyperfine states of both particles. In this work, a theoretical description of spin-state-dependent trapped atom-ion collisions is developed in the framework of a multichannel quantum-defect theory and an effective single-channel model is formulated that reduces the complexity of the problem. Based on this description, a two-qubit phase gate between a Ba135+ ion and a Rb87 atom is simulated using a realistic combination of the singlet and triplet scattering lengths. The gate process is optimized and accelerated with the help of optimal control techniques. The result is a gate fidelity of 1-10-3 within 350 μs. © 2010 The American Physical Society.

Doerk, H., Idziaszek, Z., Calarco, T. (2010). Atom-ion quantum gate. PHYSICAL REVIEW A, 81(1), 1-13 [10.1103/PhysRevA.81.012708].

Atom-ion quantum gate

Calarco T.
2010

Abstract

Ultracold collisions of ions with neutral atoms in traps are studied. Recently, ultracold atom-ion systems have become available in experimental setups, where their quantum states can be coherently controlled. This control allows for an implementation of quantum information processing, combining the advantages of charged and neutral particles. The state-dependent dynamics that is a necessary ingredient for quantum computation schemes is provided in this case by the short-range interaction forces that depend on the hyperfine states of both particles. In this work, a theoretical description of spin-state-dependent trapped atom-ion collisions is developed in the framework of a multichannel quantum-defect theory and an effective single-channel model is formulated that reduces the complexity of the problem. Based on this description, a two-qubit phase gate between a Ba135+ ion and a Rb87 atom is simulated using a realistic combination of the singlet and triplet scattering lengths. The gate process is optimized and accelerated with the help of optimal control techniques. The result is a gate fidelity of 1-10-3 within 350 μs. © 2010 The American Physical Society.
2010
Doerk, H., Idziaszek, Z., Calarco, T. (2010). Atom-ion quantum gate. PHYSICAL REVIEW A, 81(1), 1-13 [10.1103/PhysRevA.81.012708].
Doerk, H.; Idziaszek, Z.; Calarco, T.
File in questo prodotto:
Eventuali allegati, non sono esposti

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/1010157
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 96
  • ???jsp.display-item.citation.isi??? 93
social impact