We propose to perform XAFS measurements to determine the local structure of Er3+ atoms in ultra-thin Er-doped HfO2 films, which are currently investigated as high-dielectric constant (high-k) oxides for advanced nanoelectronic applications.

XAFS study of the local structure around Er3+ ion in thin Er-doped HfO2 thin films for advanced nanoelectronic applications

BOSCHERINI, FEDERICO;
2010

Abstract

We propose to perform XAFS measurements to determine the local structure of Er3+ atoms in ultra-thin Er-doped HfO2 films, which are currently investigated as high-dielectric constant (high-k) oxides for advanced nanoelectronic applications.
F. Boscherini; S. Spiga; F. D'Acapito
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11585/97584
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