We propose to perform XAFS measurements to determine the local structure of Er3+ atoms in ultra-thin Er-doped HfO2 films, which are currently investigated as high-dielectric constant (high-k) oxides for advanced nanoelectronic applications.

F. Boscherini, S. Spiga, F. D'Acapito (2010). XAFS study of the local structure around Er3+ ion in thin Er-doped HfO2 thin films for advanced nanoelectronic applications.

XAFS study of the local structure around Er3+ ion in thin Er-doped HfO2 thin films for advanced nanoelectronic applications

BOSCHERINI, FEDERICO;
2010

Abstract

We propose to perform XAFS measurements to determine the local structure of Er3+ atoms in ultra-thin Er-doped HfO2 films, which are currently investigated as high-dielectric constant (high-k) oxides for advanced nanoelectronic applications.
2010
F. Boscherini, S. Spiga, F. D'Acapito (2010). XAFS study of the local structure around Er3+ ion in thin Er-doped HfO2 thin films for advanced nanoelectronic applications.
F. Boscherini; S. Spiga; F. D'Acapito
File in questo prodotto:
Eventuali allegati, non sono esposti

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/97584
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? ND
social impact