H irradiation is a tool which can be used to tune the optical properties of "dilute nitride" semiconductor alloys. This effect is due to the formation of N-H complexes. We propose to measure XES spectra at the N K edge in GaAsN to determine the changes in the local VB DOS induced by H irradiation. This will allow to gain unavailable insight on this intriguing physical phenomenon.
Effect of hydrogen irradiation on the valence band structure of dilute nitride semiconductor allo / F. Boscherini; L. Amidani; G. Ciatto. - (2010).
Effect of hydrogen irradiation on the valence band structure of dilute nitride semiconductor allo
BOSCHERINI, FEDERICO;AMIDANI, LUCIA;
2010
Abstract
H irradiation is a tool which can be used to tune the optical properties of "dilute nitride" semiconductor alloys. This effect is due to the formation of N-H complexes. We propose to measure XES spectra at the N K edge in GaAsN to determine the changes in the local VB DOS induced by H irradiation. This will allow to gain unavailable insight on this intriguing physical phenomenon.File in questo prodotto:
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