H irradiation is a tool which can be used to tune the optical properties of "dilute nitride" semiconductor alloys. This effect is due to the formation of N-H complexes. We propose to measure XES spectra at the N K edge in GaAsN to determine the changes in the local VB DOS induced by H irradiation. This will allow to gain unavailable insight on this intriguing physical phenomenon.
F. Boscherini, L. Amidani, G. Ciatto (2010). Effect of hydrogen irradiation on the valence band structure of dilute nitride semiconductor allo.
Effect of hydrogen irradiation on the valence band structure of dilute nitride semiconductor allo
BOSCHERINI, FEDERICO;AMIDANI, LUCIA;
2010
Abstract
H irradiation is a tool which can be used to tune the optical properties of "dilute nitride" semiconductor alloys. This effect is due to the formation of N-H complexes. We propose to measure XES spectra at the N K edge in GaAsN to determine the changes in the local VB DOS induced by H irradiation. This will allow to gain unavailable insight on this intriguing physical phenomenon.File in questo prodotto:
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