H irradiation is a tool which can be used to tune the optical properties of "dilute nitride" semiconductor alloys. This effect is due to the formation of N-H complexes. We propose to measure XES spectra at the N K edge in GaAsN to determine the changes in the local VB DOS induced by H irradiation. This will allow to gain unavailable insight on this intriguing physical phenomenon.

Effect of hydrogen irradiation on the valence band structure of dilute nitride semiconductor allo

BOSCHERINI, FEDERICO;AMIDANI, LUCIA;
2010

Abstract

H irradiation is a tool which can be used to tune the optical properties of "dilute nitride" semiconductor alloys. This effect is due to the formation of N-H complexes. We propose to measure XES spectra at the N K edge in GaAsN to determine the changes in the local VB DOS induced by H irradiation. This will allow to gain unavailable insight on this intriguing physical phenomenon.
F. Boscherini; L. Amidani; G. Ciatto
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11585/97572
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