Gettering and Defect Engineering in Semiconductor Technology

This volume is a collection of papers presented at the 12h International Autumn Meet¬ing «Gettering and Defect Engineering in Semiconductor Technology - GADEST 2007" held from 14th to 19th October 2007 in Italy at the EMFCSC (Ettore Majorana Foundation and Centre for Scientific Culture), Erice, Sicily. The present proceedings contain 11 invited and 106 contributed papers from over 70 research institutions and from more than 25 different Countries. The invited papers, presented by internationally recognized experts in the field, review the state-of-the-art and future trends in their respective research field. The symposium and its proceeding volume are organized in 9 sessions: - Crystalline silicon for solar cells: single crystals, multi-crystalline Si, ribbons, Si thin films on substrates - Silicon-based materials and advanced semiconductor materials (strained Si, SOI, SiGe, SiC, Ge) - Impurities (oxygen, carbon, nitrogen, fluorine, metals) in Si - Modeling/simulation of defects in Si/semiconductors - Defect engineering in microelectronics and photovoltaics - Gettering and passivation techniques - Defect and impurity characterization (physical and electrical) - Si-based Nanostructures (nanocrystals, nanowires, nanodevices) - Silicon-based heterostructures and optoelectronics