http://www.ecscrm2006.org/ Wide-band gap semiconductors such as SiC and GaN have become the materials of choice for future developments in high power and temperature environments. In recent years, exciting new products using SiC in particular have come to the market and the future looks bright for these materials. The European Conference on Silicon Carbide and Related Materials is well-established as Europe's leading conference on this topic . Submitted abstracts are invited in all subject areas related to Silicon Carbide and Related Materials. In particular, abstracts are welcomed on the following topics: Materials Growth (Bulk and Epitaxy) Materials Characterization and Theory Device Processing Device Optimization/Performance

European Conference on Silicon Carbide and Related Materials

CAVALLINI, ANNA;
2006

Abstract

http://www.ecscrm2006.org/ Wide-band gap semiconductors such as SiC and GaN have become the materials of choice for future developments in high power and temperature environments. In recent years, exciting new products using SiC in particular have come to the market and the future looks bright for these materials. The European Conference on Silicon Carbide and Related Materials is well-established as Europe's leading conference on this topic . Submitted abstracts are invited in all subject areas related to Silicon Carbide and Related Materials. In particular, abstracts are welcomed on the following topics: Materials Growth (Bulk and Epitaxy) Materials Characterization and Theory Device Processing Device Optimization/Performance
N. Wright; C .Johnson; K. Zekentes; H. Mitlehner;M.Pons; J. Camassel;P.Godignon;A. Cavallini;R. Nipoti;P. Deak;G. Pensl;E. Janzen;J. Steeds;B. Svensson;R. Madar
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11585/43239
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