http://www.ecscrm2006.org/ Wide-band gap semiconductors such as SiC and GaN have become the materials of choice for future developments in high power and temperature environments. In recent years, exciting new products using SiC in particular have come to the market and the future looks bright for these materials. The European Conference on Silicon Carbide and Related Materials is well-established as Europe's leading conference on this topic . Submitted abstracts are invited in all subject areas related to Silicon Carbide and Related Materials. In particular, abstracts are welcomed on the following topics: Materials Growth (Bulk and Epitaxy) Materials Characterization and Theory Device Processing Device Optimization/Performance
European Conference on Silicon Carbide and Related Materials / N. Wright; C .Johnson; K. Zekentes; H. Mitlehner;M.Pons; J. Camassel;P.Godignon;A. Cavallini;R. Nipoti;P. Deak;G. Pensl;E. Janzen;J. Steeds;B. Svensson;R. Madar. - (2006).
European Conference on Silicon Carbide and Related Materials
CAVALLINI, ANNA;
2006
Abstract
http://www.ecscrm2006.org/ Wide-band gap semiconductors such as SiC and GaN have become the materials of choice for future developments in high power and temperature environments. In recent years, exciting new products using SiC in particular have come to the market and the future looks bright for these materials. The European Conference on Silicon Carbide and Related Materials is well-established as Europe's leading conference on this topic . Submitted abstracts are invited in all subject areas related to Silicon Carbide and Related Materials. In particular, abstracts are welcomed on the following topics: Materials Growth (Bulk and Epitaxy) Materials Characterization and Theory Device Processing Device Optimization/PerformanceI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
