Silicon Carbide (SiC), Gallium Nitride (GaN) and diamond are examples of wide band gap semiconductors with chemical, electrical and optical properties that make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as light-emitters operating under harsh conditions. The 5th edition of the European Conference on SiC and related materials aimed to highlight the progress made in material growth technology, characterization of material properties and technological processing for electronic and opto-electronic applications. Electronics devices were presented including high voltage, high power density and high temperature components as well as microwave components. Radiation hard, harsh environment and biological sensors, as well as optic and optoelectronic components, were considered too.
5th European Conference on Silicon Carbide and Related Materials / A. Cavallini; R. Nipoti CNR-IMM Bologna - Italy; F. Bechstedt H. Mitlehner University of Jena – Germany SiCED - Germany P. Bergman B. Monemar Linköping University - Sweden Linköping University - Sweden J. Camassel R. Nieminen University of Montpellier 2 - France Helsinki University of Technology - Finland P. Deak G. Pensl TU Budapest - Hungary University of Erlangen-Nürnberg - Germany E. Janzén M. Stutzmann Linköping University - Sweden TU Munich - Germany M. Johnson B. G. Svensson University of Sheffield – United Kingdom Oslo University – Norway R. Madar N.Wright INPG Grenoble - France NorwayUniversity of NewCaslte - United Kingdom. - (2004).
5th European Conference on Silicon Carbide and Related Materials
CAVALLINI, ANNA;
2004
Abstract
Silicon Carbide (SiC), Gallium Nitride (GaN) and diamond are examples of wide band gap semiconductors with chemical, electrical and optical properties that make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as light-emitters operating under harsh conditions. The 5th edition of the European Conference on SiC and related materials aimed to highlight the progress made in material growth technology, characterization of material properties and technological processing for electronic and opto-electronic applications. Electronics devices were presented including high voltage, high power density and high temperature components as well as microwave components. Radiation hard, harsh environment and biological sensors, as well as optic and optoelectronic components, were considered too.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
