TOtem STtrip Edgeless Radiation hard detectors (TOTEM)

In silicon devices fabricated with standard planar technology a portion of the volume is lost to be dedicated generally to protective structures which control the stability of the working performance. In the specific case of silicon detectors these protective structures surround the whole device and for radiation hard applications, where high voltage is required, extend for more than 1mm with the consequence of a wide insensitive area at the edges. In view of an extension of the TOTEM program requiring a specifically radiation hard microstrip detector with the same sensitivity at the edge further developments to improve the detector performance are mandatory. The frame of this specific CERN LHC INTAS call is a great opportunity to pursuit these studies with the possibility to enlarge the initial collaboration between CERN and the NIS institutes to a Consortium where other INTAS institutes can provide complementary expertise and facilities requested in the development of radiation hard planar edgeless detector.