The project concerns the study carried out in GaN nanocolumns by means of different characterization techniques. The growth has been carried out at the Forschungszentrum Jülich – ISG1 by PAMBE (Plasma Assisted Molecular Beam Epitaxy). Structural and electrical characterization of the nanowhiskers have been performed by PL (photoluminescence), CL (cathodoluminescence), Raman Spectroscopy, dark and UV conductivity and Spectral Photoconductivity. The inhomogenous distribution of specific defects was found along the nanocolums and the effect of size in electrical and optical behaviour is deeply investigated.
GaN Nanowhiskers:structural, electrical and optical characterization / Cavallini A.; Calarco R.. - (2006).
GaN Nanowhiskers:structural, electrical and optical characterization
CAVALLINI, ANNA;
2006
Abstract
The project concerns the study carried out in GaN nanocolumns by means of different characterization techniques. The growth has been carried out at the Forschungszentrum Jülich – ISG1 by PAMBE (Plasma Assisted Molecular Beam Epitaxy). Structural and electrical characterization of the nanowhiskers have been performed by PL (photoluminescence), CL (cathodoluminescence), Raman Spectroscopy, dark and UV conductivity and Spectral Photoconductivity. The inhomogenous distribution of specific defects was found along the nanocolums and the effect of size in electrical and optical behaviour is deeply investigated.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
