The applicability of XAFS to the structural study of dilute atoms is one of its main characteristics. It has been used extensively to study dopants in semiconductors, providing in many cases a structural basis for the understanding of physical properties. After a brief introduction to the use of XAFS in this field a review of the literature will be presented, ranging from the pioneering studies of As in amorphous Si to recent investigations on semiconductor systems of current interest.

Dopants

BOSCHERINI, FEDERICO
2015

Abstract

The applicability of XAFS to the structural study of dilute atoms is one of its main characteristics. It has been used extensively to study dopants in semiconductors, providing in many cases a structural basis for the understanding of physical properties. After a brief introduction to the use of XAFS in this field a review of the literature will be presented, ranging from the pioneering studies of As in amorphous Si to recent investigations on semiconductor systems of current interest.
2015
X-ray Absorption Spectroscopy of Semiconductors
77
98
Federico Boscherini
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/394384
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