The applicability of XAFS to the structural study of dilute atoms is one of its main characteristics. It has been used extensively to study dopants in semiconductors, providing in many cases a structural basis for the understanding of physical properties. After a brief introduction to the use of XAFS in this field a review of the literature will be presented, ranging from the pioneering studies of As in amorphous Si to recent investigations on semiconductor systems of current interest.
Dopants / Federico Boscherini. - STAMPA. - (2015), pp. 77-98. [10.1007/978-3-662-44362-0_4]
Dopants
BOSCHERINI, FEDERICO
2015
Abstract
The applicability of XAFS to the structural study of dilute atoms is one of its main characteristics. It has been used extensively to study dopants in semiconductors, providing in many cases a structural basis for the understanding of physical properties. After a brief introduction to the use of XAFS in this field a review of the literature will be presented, ranging from the pioneering studies of As in amorphous Si to recent investigations on semiconductor systems of current interest.File in questo prodotto:
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