We aim to clarify the relation between the incorporation site of Sb and In dopants in 3 – 4 nm PbS colloidal quantum dots (CQDs) and their optoelectronic properties. The method of choice is fluorescence detected XAFS at the K edges of the dopants. These measurements will be of great importance in order to understand the observed physical properties, in particular: differences in incorporation rates between the two dopants, changes in the host matrix lattice structure, Fermi level pinning and the different changes of the optical properties of the QDs induced by the two dopants.
Dopant incorporation in PbS quantum dots for solarcells
BOSCHERINI, FEDERICO;
2014
Abstract
We aim to clarify the relation between the incorporation site of Sb and In dopants in 3 – 4 nm PbS colloidal quantum dots (CQDs) and their optoelectronic properties. The method of choice is fluorescence detected XAFS at the K edges of the dopants. These measurements will be of great importance in order to understand the observed physical properties, in particular: differences in incorporation rates between the two dopants, changes in the host matrix lattice structure, Fermi level pinning and the different changes of the optical properties of the QDs induced by the two dopants.File in questo prodotto:
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