We aim to clarify the relation between the incorporation site of Sb and In dopants in 3 – 4 nm PbS colloidal quantum dots (CQDs) and their optoelectronic properties. The method of choice is fluorescence detected XAFS at the K edges of the dopants. These measurements will be of great importance in order to understand the observed physical properties, in particular: differences in incorporation rates between the two dopants, changes in the host matrix lattice structure, Fermi level pinning and the different changes of the optical properties of the QDs induced by the two dopants.

Federico Boscherini, Gerasimos Konstantatos, Alexandros Stavrinadis (2014). Dopant incorporation in PbS quantum dots for solarcells.

Dopant incorporation in PbS quantum dots for solarcells

BOSCHERINI, FEDERICO;
2014

Abstract

We aim to clarify the relation between the incorporation site of Sb and In dopants in 3 – 4 nm PbS colloidal quantum dots (CQDs) and their optoelectronic properties. The method of choice is fluorescence detected XAFS at the K edges of the dopants. These measurements will be of great importance in order to understand the observed physical properties, in particular: differences in incorporation rates between the two dopants, changes in the host matrix lattice structure, Fermi level pinning and the different changes of the optical properties of the QDs induced by the two dopants.
2014
2014
Federico Boscherini, Gerasimos Konstantatos, Alexandros Stavrinadis (2014). Dopant incorporation in PbS quantum dots for solarcells.
Federico Boscherini; Gerasimos Konstantatos; Alexandros Stavrinadis
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/392066
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