The Laboratory of Chemistry and Physics of Semiconductor (LCPS) is active and internationally known since the early eighties in the field of growth and characterization of semiconductors, with major interests about silicon based materials. In this frame the electrical, structural and optical properties of silicon have been studied in details, with the simultaneous development of growth processes and characterization apparatuses. In particular, the liquid phase epitaxy technique has been applied to grow erbium-doped silicon and the LBIC (Light beam induced current) technique has been developed for the study of extended defects in ULSI and solar silicon.
Opto-electronic behavior of silicon used for ULSI
CAVALLINI, ANNA;
2004
Abstract
The Laboratory of Chemistry and Physics of Semiconductor (LCPS) is active and internationally known since the early eighties in the field of growth and characterization of semiconductors, with major interests about silicon based materials. In this frame the electrical, structural and optical properties of silicon have been studied in details, with the simultaneous development of growth processes and characterization apparatuses. In particular, the liquid phase epitaxy technique has been applied to grow erbium-doped silicon and the LBIC (Light beam induced current) technique has been developed for the study of extended defects in ULSI and solar silicon.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
