We propose to study the defects introduced in AlGaN and CdZnTe by proton irradiation at cryogenic as well as elevated temperatures. The defects introduced at very low temperatures are referred to as first generation defects. AlGaN is used to fabricate sensors for ultra-violet rays and CdZnTe is used to fabricate sensors for the detection of x- and gamma rays.
“Irradiation and characterization of advanced semiconductor detectors and the defects therein" / A. Cavallini; D. Auret. - (2013).
“Irradiation and characterization of advanced semiconductor detectors and the defects therein"
CAVALLINI, ANNA;
2013
Abstract
We propose to study the defects introduced in AlGaN and CdZnTe by proton irradiation at cryogenic as well as elevated temperatures. The defects introduced at very low temperatures are referred to as first generation defects. AlGaN is used to fabricate sensors for ultra-violet rays and CdZnTe is used to fabricate sensors for the detection of x- and gamma rays.File in questo prodotto:
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