The objective of the proposed experiment is to determine lattice location of H and possible formation of H complexes, along with their local structure using X-Ray Absorption Spectroscopy (XAS). XAS is the technique of choice in view of the atomic selectivity and high resolution in real space . Together with high-resolution XRD and nuclear reaction analysis (NRA) and ab-initio density functional theory (DFT) simulation of the atomic structure, XAS has been shown by some of the proposers to be an extremely powerful tool to determine the structure of hydrogen complexes in dilute nitrides, such as GaAsN and GaPN. The same methods previously used for dilute nitrides will be applied in the present case.
F. Boscherini, L. Amidani, G. Ciatto (2011). Local structure of Hydrogen defects in nitride sem iconductors.
Local structure of Hydrogen defects in nitride sem iconductors
BOSCHERINI, FEDERICO;AMIDANI, LUCIA;
2011
Abstract
The objective of the proposed experiment is to determine lattice location of H and possible formation of H complexes, along with their local structure using X-Ray Absorption Spectroscopy (XAS). XAS is the technique of choice in view of the atomic selectivity and high resolution in real space . Together with high-resolution XRD and nuclear reaction analysis (NRA) and ab-initio density functional theory (DFT) simulation of the atomic structure, XAS has been shown by some of the proposers to be an extremely powerful tool to determine the structure of hydrogen complexes in dilute nitrides, such as GaAsN and GaPN. The same methods previously used for dilute nitrides will be applied in the present case.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
