After a review of some basic phenomenology, the origin of the fine structure in X-ray absorption spectra is described. An outline of multiple scattering theory is presented and, in this framework, the extended and near edge regions of the X-ray absorption spectrum are discussed. Subsequently, the main experimental set-ups which are relevant for semiconductor research are described. Finally, a review of the use of x-ray absorption in the study of semiconductor heterostructures and nanostructures is reported.

X-Ray Absorption Fine Structure in the Study of Semiconductor Heterostructures and Nanostructures

BOSCHERINI, FEDERICO
2013

Abstract

After a review of some basic phenomenology, the origin of the fine structure in X-ray absorption spectra is described. An outline of multiple scattering theory is presented and, in this framework, the extended and near edge regions of the X-ray absorption spectrum are discussed. Subsequently, the main experimental set-ups which are relevant for semiconductor research are described. Finally, a review of the use of x-ray absorption in the study of semiconductor heterostructures and nanostructures is reported.
2013
Characterization of Semiconductor Heterostructures and Nanostructures
259
310
F. Boscherini
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/152168
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