X-Ray Absorption Fine Structure in the Study of Semiconductor Heterostructures and Nanostructures

After a review of some basic phenomenology, the origin of the fine structure in X-ray absorption spectra is described. An outline of multiple scattering theory is presented and, in this framework, the extended and near edge regions of the X-ray absorption spectrum are discussed. Subsequently, the main experimental set-ups which are relevant for semiconductor research are described. Finally, a review of the use of x-ray absorption in the study of semiconductor heterostructures and nanostructures is reported.