The stimulated ignition of latchup effects caused by external radiation has so far proven to be a hidden hazard. Here this effect is described as a novel approach to detect particles by means of a solid-state device susceptible to latchup effects. In addition, the device can also be used as a circuit for reading sensors' signals, leaving the capability of sensing to external sensors. As the MOS transistors are widely used at present in microelectronics devices and sensors, this latchup-based cell is proposed as a novel structure for future applications in particle detection, amplification of sensors' signals and radiation monitoring.
Exploiting a latchup circuit via commercial CMOS technologies / Gabrielli A.; Villani G.; Demarchi D.. - ELETTRONICO. - (2009), pp. 1198-1201. [10.1109/NSSMIC.2009.5402388]
Exploiting a latchup circuit via commercial CMOS technologies
GABRIELLI, ALESSANDRO;
2009
Abstract
The stimulated ignition of latchup effects caused by external radiation has so far proven to be a hidden hazard. Here this effect is described as a novel approach to detect particles by means of a solid-state device susceptible to latchup effects. In addition, the device can also be used as a circuit for reading sensors' signals, leaving the capability of sensing to external sensors. As the MOS transistors are widely used at present in microelectronics devices and sensors, this latchup-based cell is proposed as a novel structure for future applications in particle detection, amplification of sensors' signals and radiation monitoring.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
