MINJ, ALBERT
 Distribuzione geografica
Continente #
EU - Europa 22
NA - Nord America 13
AS - Asia 11
Totale 46
Nazione #
US - Stati Uniti d'America 13
CN - Cina 8
IT - Italia 7
ES - Italia 4
FR - Francia 3
DE - Germania 2
IE - Irlanda 2
JP - Giappone 2
BE - Belgio 1
GB - Regno Unito 1
HU - Ungheria 1
IN - India 1
NL - Olanda 1
Totale 46
Città #
Ashburn 5
Belluno 3
Bologna 2
Dublin 2
San Diego 2
Tokyo 2
Ann Arbor 1
Chicago 1
Forlì 1
Hangzhou 1
Heverlee 1
Houston 1
Ismaning 1
Lincoln 1
Pune 1
Ravenna 1
Seattle 1
Southend 1
Toulouse 1
Totale 29
Nome #
Strain relaxation, extended defects and doping effects in InxGa1-xN/GaN heterostructures investigated by surface photovoltage, file e1dcb337-a26c-7715-e053-1705fe0a6cc9 41
Strain relaxation, extended defects and doping effects in InxGa1-xN/GaN heterostructures investigated by surface photovoltage, file e1dcb336-4e1b-7715-e053-1705fe0a6cc9 3
Surface properties of AlInGaN/GaN heterostructure, file e1dcb32e-aff9-7715-e053-1705fe0a6cc9 1
Optical and electrical characterization of ternary and quaternary gallium nitride based alloys, file e1dcb333-eef0-7715-e053-1705fe0a6cc9 1
Totale 46
Categoria #
all - tutte 229
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 229


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20214 0 0 0 0 0 0 0 1 3 0 0 0
2021/20229 0 0 0 0 0 0 0 0 4 2 0 3
2022/202315 1 1 0 4 1 1 1 0 2 0 3 1
2023/202417 0 3 1 1 4 2 0 1 5 0 0 0
Totale 46