CRIS Current Research Information System

ERCOLANO, FRANCO

ERCOLANO, FRANCO  

DEI - DIPARTIMENTO DI INGEGNERIA DELL'ENERGIA ELETTRICA E DELL'INFORMAZIONE "GUGLIELMO MARCONI"  

Dottorandi  

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Risultati 1 - 5 di 5 (tempo di esecuzione: 0.012 secondi).
Titolo Autore(i) Anno Periodico Editore Tipo File
Reliability of AlScN/GaN HEMTs Under Pulsed Measurements and HTRB Step-Stress Tests: Experimental and TCAD Insights Ercolano, F.; Balestra, L.; Krause, S.; Leone, S.; Streicher, I.; Waltereit, P.; Dammann, M.; Reg...giani, S. 2026-01-01 IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY - 1.01 Articolo in rivista Reliability_of_AlScN_GaN_HEMTs_Under_Pulsed_Measurements_and_HTRB_Step-Stress_Tests_Experimental_and_TCAD_Insights.pdf
TCAD analysis of the high-temperature reverse-bias stress on AlGaN/GaN HEMTs Ercolano, F.; Balestra, L.; Krause, S.; Leone, S.; Streicher, I.; Waltereit, P.; Dammann, M.; Reg...giani, S. 2025-01-01 POWER ELECTRONIC DEVICES AND COMPONENTS - 1.01 Articolo in rivista 1-s2.0-S2772370425000057-main.pdf
GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Modeling of the Gate Leakage Current Ercolano, F.; Tallarico, A. N.; Millesimo, M.; Gnani, E.; Reggiani, S.; Fiegna, C.; Borga, M.; Po...sthuma, N.; Bakeroot, B. 2024-01-01 - Springer Science and Business Media Deutschland GmbH 4.01 Contributo in Atti di convegno SIE_2023_.pdf
Role of trapping/detrapping in HTRB Stress and pulsed DC conditions in AlGaN/GaN HEMTs analyzed via TCAD simulations Ercolano, F.; Balestra, L.; Krause, S.; Leone, S.; Streicher, I.; Waltereit, P.; Dammann, M.; Reg...giani, S. 2023-01-01 - Institute of Electrical and Electronics Engineers Inc. 4.01 Contributo in Atti di convegno IIRW_Manuscript_Franco_Ercolano_Student_Paper 2.pdf
TCAD Modeling of High-Field Electron Transport in Bulk Wurtzite GaN: The Full-Band SHE-BTE Balestra L.; Ercolano F.; Gnani E.; Reggiani S. 2023-01-01 IEEE ACCESS - 1.01 Articolo in rivista TCAD_Modeling_of_High-Field_Electron_Transport_in_Bulk_Wurtzite_GaN_The_Full-Band_SHE-BTE.pdf