ERCOLANO, FRANCO
ERCOLANO, FRANCO
DEI - DIPARTIMENTO DI INGEGNERIA DELL'ENERGIA ELETTRICA E DELL'INFORMAZIONE "GUGLIELMO MARCONI"
Dottorandi
TCAD analysis of the high-temperature reverse-bias stress on AlGaN/GaN HEMTs
2025 Ercolano, F.; Balestra, L.; Krause, S.; Leone, S.; Streicher, I.; Waltereit, P.; Dammann, M.; Reggiani, S.
GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Modeling of the Gate Leakage Current
2024 Ercolano, F.; Tallarico, A. N.; Millesimo, M.; Gnani, E.; Reggiani, S.; Fiegna, C.; Borga, M.; Posthuma, N.; Bakeroot, B.
Role of trapping/detrapping in HTRB Stress and pulsed DC conditions in AlGaN/GaN HEMTs analyzed via TCAD simulations
2023 Ercolano, F.; Balestra, L.; Krause, S.; Leone, S.; Streicher, I.; Waltereit, P.; Dammann, M.; Reggiani, S.
TCAD Modeling of High-Field Electron Transport in Bulk Wurtzite GaN: The Full-Band SHE-BTE
2023 Balestra L.; Ercolano F.; Gnani E.; Reggiani S.
| Titolo | Autore(i) | Anno | Periodico | Editore | Tipo | File |
|---|---|---|---|---|---|---|
| TCAD analysis of the high-temperature reverse-bias stress on AlGaN/GaN HEMTs | Ercolano, F.; Balestra, L.; Krause, S.; Leone, S.; Streicher, I.; Waltereit, P.; Dammann, M.; Reg...giani, S. | 2025-01-01 | POWER ELECTRONIC DEVICES AND COMPONENTS | - | 1.01 Articolo in rivista | 1-s2.0-S2772370425000057-main.pdf |
| GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Modeling of the Gate Leakage Current | Ercolano, F.; Tallarico, A. N.; Millesimo, M.; Gnani, E.; Reggiani, S.; Fiegna, C.; Borga, M.; Po...sthuma, N.; Bakeroot, B. | 2024-01-01 | - | Springer Science and Business Media Deutschland GmbH | 4.01 Contributo in Atti di convegno | SIE_2023_.pdf |
| Role of trapping/detrapping in HTRB Stress and pulsed DC conditions in AlGaN/GaN HEMTs analyzed via TCAD simulations | Ercolano, F.; Balestra, L.; Krause, S.; Leone, S.; Streicher, I.; Waltereit, P.; Dammann, M.; Reg...giani, S. | 2023-01-01 | - | Institute of Electrical and Electronics Engineers Inc. | 4.01 Contributo in Atti di convegno | IIRW_Manuscript_Franco_Ercolano_Student_Paper 2.pdf |
| TCAD Modeling of High-Field Electron Transport in Bulk Wurtzite GaN: The Full-Band SHE-BTE | Balestra L.; Ercolano F.; Gnani E.; Reggiani S. | 2023-01-01 | IEEE ACCESS | - | 1.01 Articolo in rivista | TCAD_Modeling_of_High-Field_Electron_Transport_in_Bulk_Wurtzite_GaN_The_Full-Band_SHE-BTE.pdf |