We propose to perform XAFS measurements to determine the local structure of Er3+ atoms in ultra-thin Er-doped HfO2 films, which are currently investigated as high-dielectric constant (high-k) oxides for advanced nanoelectronic applications.
XAFS study of the local structure around Er3+ ion in thin Er-doped HfO2 thin films for advanced nanoelectronic applications / F. Boscherini; S. Spiga; F. D'Acapito. - (2010).
XAFS study of the local structure around Er3+ ion in thin Er-doped HfO2 thin films for advanced nanoelectronic applications
BOSCHERINI, FEDERICO;
2010
Abstract
We propose to perform XAFS measurements to determine the local structure of Er3+ atoms in ultra-thin Er-doped HfO2 films, which are currently investigated as high-dielectric constant (high-k) oxides for advanced nanoelectronic applications.File in questo prodotto:
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