X-ray absorption fine structure (XAFS) is a powerful tool in the study of the local atomic environment in condensed matter. It has been often applied to the study of semiconductor heterostructures and nanostructures, significantly contributing to their characterization at the local level and to the understanding of the relation between atomic structure and physical properties. This chapter begins with an introduction to XAFS as a tool for the determination of local structure; the physical origin of the fine structure is illustrated and the present understanding of X-ray absorption spectra in the framework of multiple scattering theory is outlined. The second section contains a description of the diverse experimental setups and detection schemes, which can be used in the field of semiconductor science; an effort has been made to make this section both as complete and up-to-date as possible, so that it can serve as a useful reference, also outside the field of semiconductor physics. In the third section, a review of the use of XAFS to study semiconductor heterostructures and nanostructures is presented, covering bond length variations in strained heterostructures, local atomic environments in nanostructures (Ge islands, embedded nanoparticles, porous Si, and related systems), nitride heterostructures, and thin films, and finally dilute alloys heterostructures, that is dilute nitrides and dilute magnetic semiconductors.

XAFS in the study of semiconductor heterostructures and nanostructures / F. Boscherini. - STAMPA. - (2008), pp. 289-330.

XAFS in the study of semiconductor heterostructures and nanostructures

BOSCHERINI, FEDERICO
2008

Abstract

X-ray absorption fine structure (XAFS) is a powerful tool in the study of the local atomic environment in condensed matter. It has been often applied to the study of semiconductor heterostructures and nanostructures, significantly contributing to their characterization at the local level and to the understanding of the relation between atomic structure and physical properties. This chapter begins with an introduction to XAFS as a tool for the determination of local structure; the physical origin of the fine structure is illustrated and the present understanding of X-ray absorption spectra in the framework of multiple scattering theory is outlined. The second section contains a description of the diverse experimental setups and detection schemes, which can be used in the field of semiconductor science; an effort has been made to make this section both as complete and up-to-date as possible, so that it can serve as a useful reference, also outside the field of semiconductor physics. In the third section, a review of the use of XAFS to study semiconductor heterostructures and nanostructures is presented, covering bond length variations in strained heterostructures, local atomic environments in nanostructures (Ge islands, embedded nanoparticles, porous Si, and related systems), nitride heterostructures, and thin films, and finally dilute alloys heterostructures, that is dilute nitrides and dilute magnetic semiconductors.
2008
Characterization of Semiconductor Heterostructures and Nanostructures
289
330
XAFS in the study of semiconductor heterostructures and nanostructures / F. Boscherini. - STAMPA. - (2008), pp. 289-330.
F. Boscherini
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/89361
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