In this work we focus on the effects of switched gate and substrate bias on the Random Telegraph Signal (RTS) noise in small-area MOSFETs. The results of experimental characterization of low-frequency noise in 0.12 micron MOSFETs show that by applying a reverse substrate bias during the OFF-phase within a switched-gate bias scheme, a significant reduction of RTS noise is obtained.

Suppression of Random Telegraph Signal Noise in small-area MOSFETs under switched gate and substrate bias conditions

ZANOLLA, NICOLA;SANGIORGI, ENRICO;FIEGNA, CLAUDIO
2009

Abstract

In this work we focus on the effects of switched gate and substrate bias on the Random Telegraph Signal (RTS) noise in small-area MOSFETs. The results of experimental characterization of low-frequency noise in 0.12 micron MOSFETs show that by applying a reverse substrate bias during the OFF-phase within a switched-gate bias scheme, a significant reduction of RTS noise is obtained.
2009
Noise and Fluctuations, 20th International Conference
201
204
N. Zanolla; D. Siprak; M. Tiebout; P. Baumgartner; E. Sangiorgi; C. Fiegna
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/88229
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