A wideband hybrid AlGaN/GaN Resistive Mixer has been designed and simulated. The cold-FET mixer is based on a 2*100*0.25 μm² AlGaN/GaN HEMT in a single-ended circuit topology. An application-specific empirical transistor model has been extracted and validated in small- and large-signal conditions, in order to carry out the mixer design and simulations. This mixer presents an IF bandwidth of 6 GHz with a conversion loss < 16 dB for each RF and LO frequency choice from 6 up to 18 GHz.
Modelling and Design of a Wideband 6-18 GHz GaN Resistive Mixer / V. Di Giacomo; N. Thouvenin; C. Gaquière; A. Santarelli; F. Filicori. - STAMPA. - 1:(2009), pp. 459-462. (Intervento presentato al convegno European Microwave Week 2009 tenutosi a Rome, Italy nel 28 Sep - 2 Oct, 2009) [10.1109/EUMC.2009.5295933].
Modelling and Design of a Wideband 6-18 GHz GaN Resistive Mixer
DI GIACOMO, VALERIA;SANTARELLI, ALBERTO;FILICORI, FABIO
2009
Abstract
A wideband hybrid AlGaN/GaN Resistive Mixer has been designed and simulated. The cold-FET mixer is based on a 2*100*0.25 μm² AlGaN/GaN HEMT in a single-ended circuit topology. An application-specific empirical transistor model has been extracted and validated in small- and large-signal conditions, in order to carry out the mixer design and simulations. This mixer presents an IF bandwidth of 6 GHz with a conversion loss < 16 dB for each RF and LO frequency choice from 6 up to 18 GHz.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
