In this work we present an investigation on the program, erase and retention properties of TaN/Al2O3/HfO2/SiO2/Si (TAHOS) nonvolatile (NV) memory cells fabricated on an advanced gate-all-around (GAA) architecture. The influence of several device parameters on the above characteristics is quantitatively assessed by numerical simulation, using an in-house developed simulation code suitable for both planar and cylindrical geometries.
Performance Analysis of Nonvolatile Gate-All-Around Charge-Trapping TAHOS Memory Cells
GNANI, ELENA;GNUDI, ANTONIO;REGGIANI, SUSANNA;BACCARANI, GIORGIO;
2009
Abstract
In this work we present an investigation on the program, erase and retention properties of TaN/Al2O3/HfO2/SiO2/Si (TAHOS) nonvolatile (NV) memory cells fabricated on an advanced gate-all-around (GAA) architecture. The influence of several device parameters on the above characteristics is quantitatively assessed by numerical simulation, using an in-house developed simulation code suitable for both planar and cylindrical geometries.File in questo prodotto:
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