A new method is proposed for the accurate experimental characterization and fully automated extraction of compact nonlinear models for field-effect transistors (FETs). The approach, which leads to a charge-conservative description, is based on a single large-signal measurement under a two-tone sinusoidal wave excitation. A suitable choice of tone frequencies, amplitudes, and bias allows to adequately characterize the transistor over the whole safe operating region. The voltage-controlled nonlinear functions describing the two-port FET model can be computed over an arbitrarily dense voltage domain by solving an overdetermined system of linear equations. These equations are expressed in terms of a new nonlinear function sampling operator based on a biperiodic Fourier series description of the acquired frequency spectra. The experimental validation is carried out on a 0.25- mu ext{m} gallium nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) under continuous-wave (CW) and two-tone excitation (intermodulation distortion test).
Automatic Extraction of Measurement-Based Large-Signal FET Models by Nonlinear Function Sampling / Martin-Guerrero T.M.; Santarelli A.; Gibiino G.P.; Traverso P.A.; Camacho-Penalosa C.; Filicori F.. - In: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. - ISSN 0018-9480. - STAMPA. - 68:5(2020), pp. 9049109.1627-9049109.1636. [10.1109/TMTT.2020.2968886]
Automatic Extraction of Measurement-Based Large-Signal FET Models by Nonlinear Function Sampling
Santarelli A.;Gibiino G. P.;Traverso P. A.;Filicori F.
2020
Abstract
A new method is proposed for the accurate experimental characterization and fully automated extraction of compact nonlinear models for field-effect transistors (FETs). The approach, which leads to a charge-conservative description, is based on a single large-signal measurement under a two-tone sinusoidal wave excitation. A suitable choice of tone frequencies, amplitudes, and bias allows to adequately characterize the transistor over the whole safe operating region. The voltage-controlled nonlinear functions describing the two-port FET model can be computed over an arbitrarily dense voltage domain by solving an overdetermined system of linear equations. These equations are expressed in terms of a new nonlinear function sampling operator based on a biperiodic Fourier series description of the acquired frequency spectra. The experimental validation is carried out on a 0.25- mu ext{m} gallium nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) under continuous-wave (CW) and two-tone excitation (intermodulation distortion test).I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.