This paper presents an Analog Front-End for integrated Wake-Up Radios. The proposed Analog Front-End is composed of an envelope detector, a Schmitt trigger and a biasing block and has three distinctive features: i) clockless solution, which does not require an always-on oscillator; ii) an envelope detector with band-pass response which leads to smaller capacitance, thus easier integration, and low-frequency noise suppression; iii) temperature compensated biasing scheme. An active scheme for the detector is used based on MOSFETs operated in the subthreshold region with a self-biased topology. Advantages and drawbacks of the proposed architecture are analyzed. A prototype was fabricated in the STMicroelectronics 90-nm BCD technology. The overall power consumption, excluding the biasing block, is 36 nW at 1.2 V. A 10 -3 Bit Error Rate is measured with a 771-MHz, 2-kbit/s OOK modulated input signal with -46 dBm power at room temperature and at -20 °C, and with almost -43 dBm power at 60 °C.

A Clockless Temperature-Compensated Nanowatt Analog Front-End for Wake-Up Radios Based on a Band-Pass Envelope Detector / Elgani A.M.; Renzini F.; Perilli L.; Franchi Scarselli E.; Gnudi A.; Canegallo R.; Ricotti G.. - In: IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS. I, REGULAR PAPERS. - ISSN 1549-8328. - ELETTRONICO. - 67:8(2020), pp. 9080567.2612-9080567.2624. [10.1109/TCSI.2020.2987850]

A Clockless Temperature-Compensated Nanowatt Analog Front-End for Wake-Up Radios Based on a Band-Pass Envelope Detector

Elgani A. M.
;
Renzini F.;Perilli L.;Franchi Scarselli E.;Gnudi A.;
2020

Abstract

This paper presents an Analog Front-End for integrated Wake-Up Radios. The proposed Analog Front-End is composed of an envelope detector, a Schmitt trigger and a biasing block and has three distinctive features: i) clockless solution, which does not require an always-on oscillator; ii) an envelope detector with band-pass response which leads to smaller capacitance, thus easier integration, and low-frequency noise suppression; iii) temperature compensated biasing scheme. An active scheme for the detector is used based on MOSFETs operated in the subthreshold region with a self-biased topology. Advantages and drawbacks of the proposed architecture are analyzed. A prototype was fabricated in the STMicroelectronics 90-nm BCD technology. The overall power consumption, excluding the biasing block, is 36 nW at 1.2 V. A 10 -3 Bit Error Rate is measured with a 771-MHz, 2-kbit/s OOK modulated input signal with -46 dBm power at room temperature and at -20 °C, and with almost -43 dBm power at 60 °C.
2020
A Clockless Temperature-Compensated Nanowatt Analog Front-End for Wake-Up Radios Based on a Band-Pass Envelope Detector / Elgani A.M.; Renzini F.; Perilli L.; Franchi Scarselli E.; Gnudi A.; Canegallo R.; Ricotti G.. - In: IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS. I, REGULAR PAPERS. - ISSN 1549-8328. - ELETTRONICO. - 67:8(2020), pp. 9080567.2612-9080567.2624. [10.1109/TCSI.2020.2987850]
Elgani A.M.; Renzini F.; Perilli L.; Franchi Scarselli E.; Gnudi A.; Canegallo R.; Ricotti G.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/792922
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