The hole impact-ionization coefficient and the hot-electron injection model presently available in the Synopsys TCAD tool have been calibrated, as a necessary step towards the possibility to predict the long-term reliability of the new generation p-channel power LDMOS devices integrated in BCD technology. First, the models have been calibrated on ad-hoc test structures such as p-channel MOSFETs with separated source and body contacts and n-channel MOSFETs with an additional sub-surface emitter region in order to have direct access to the experimental characterization of the impact-ionization under hole avalanche regime and of the hot-electron injection, respectively. Then, the calibrated models have been validated on p-channel power LDMOS featuring the STI architecture. The proposed TCAD approach accurately captures the relevant effects over an extended range of electric fields.
TCAD predictions of hot-electron injection in p-type LDMOS transistors / F. Giuliano, A. N. Tallarico, S. Reggiani, A. Gnudi, E. Sangiorgi, C. Fiegna, M. Rossetti, A. Molfese, S. Manzini, R. Depetro, G. Croce. - ELETTRONICO. - (2019), pp. 8901703.86-8901703.89. (Intervento presentato al convegno ESSDERC 2019 tenutosi a Cracovia nel 23-26/09/2019) [10.1109/ESSDERC.2019.8901703].
TCAD predictions of hot-electron injection in p-type LDMOS transistors
F. Giuliano;A. N. Tallarico;S. Reggiani;A. Gnudi;E. Sangiorgi;C. Fiegna;
2019
Abstract
The hole impact-ionization coefficient and the hot-electron injection model presently available in the Synopsys TCAD tool have been calibrated, as a necessary step towards the possibility to predict the long-term reliability of the new generation p-channel power LDMOS devices integrated in BCD technology. First, the models have been calibrated on ad-hoc test structures such as p-channel MOSFETs with separated source and body contacts and n-channel MOSFETs with an additional sub-surface emitter region in order to have direct access to the experimental characterization of the impact-ionization under hole avalanche regime and of the hot-electron injection, respectively. Then, the calibrated models have been validated on p-channel power LDMOS featuring the STI architecture. The proposed TCAD approach accurately captures the relevant effects over an extended range of electric fields.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.